? semiconductor components industries, llc, 2005 march, 2005 ? rev. 5 1 publication order number: MBR0540T1/d MBR0540T1, mbr0540t3 surface mount schottky power rectifier sod?123 power surface mount package the schottky power rectifier employs the schottky barrier principle with a barrier metal that produces optimal forward voltage drop?reverse current tradeoff. ideally suited for low voltage, high frequency rectification, or as a free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. this package provides an alternative to the leadless 34 melf style package. features ? guardring for stress protection ? very low forward voltage ? epoxy meets ul 94 v?0 @ 0.125 in ? package designed for optimal automated board assembly ? pb?free packages are available mechanical characteristics ? reel options: 3,000 per 7 inch reel/8 mm tape ? reel options: 10,000 per 13 inch reel/8 mm tape ? device marking: b4 ? polarity designator: cathode band ? weight: 11.7 mg (approximately) ? case: epoxy molded ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds b4 = device code m = date code http://onsemi.com schottky barrier rectifier 0.5 amperes, 40 volts sod?123 case 425 style 1 marking diagram b4 m device package shipping 2 ordering information MBR0540T1 sod?123 3000/tape & reel mbr0540t3 sod?123 10,000/tape & reel MBR0540T1g sod?123 (pb?free) 3000/tape & reel mbr0540t3g sod?123 (pb?free) 10,000/tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. .com .com .com 4 .com u datasheet
MBR0540T1, mbr0540t3 http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 40 v average rectified forward current (at rated v r , t c = 115 c) i o 0.5 a peak repetitive forward current (at rated v r , square wave, 20 khz, t c = 115 c) i frm 1.0 a non?repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 5.5 a storage/operating case temperature range t stg , t c ?55 to +150 c operating junction temperature t j ?55 to +150 c voltage rate of change (rated v r , t j = 25 c) dv/dt 1000 v/ s maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. thermal characteristics rating symbol value unit thermal resistance ? junction?to?lead (note 1) thermal resistance ? junction?to?ambient (note 2) r tjl r tja 118 206 c/w electrical characteristics maximum instantaneous forward voltage (note 3) v f t j = 25 c t j = 100 c v (i f = 0.5 a) (i f = 1 a) 0.51 0.62 0.46 0.61 maximum instantaneous reverse current (note 3) i r t j = 25 c t j = 100 c a (v r = 40 v) (v r = 20 v) 20 10 13,000 5,000 1. mounted with minimum recommended pad size, pc board fr4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on fr4 board. 3. pulse test: pulse width 250 s, duty cycle 2.0%. .com .com .com .com 4 .com u datasheet
MBR0540T1, mbr0540t3 http://onsemi.com 3 0.2 10 1.0 0.1 0.6 1.2 0.4 0.8 1.0 figure 1. typical forward voltage figure 2. maximum forward voltage figure 3. typical reverse current figure 4. maximum reverse current 0.2 v f , instantaneous forward voltage (volts) 10 1.0 v f , maximum instantaneous forward voltage (volts) 40 0 v r , reverse voltage (volts) 100e-3 1.0e-3 100e-6 10e-6 1.0e-6 100e-9 v r , reverse voltage (volts) i f , instantaneous forward current (amps) i 0.1 0.6 1.2 0.4 0.8 10 20 30 i f , instantaneous forward current (amps) , reverse current (amps) r 40 0 i 10 20 30 , maximum reverse current (amps) r t j = 125 c t j = 100 c t j = -40 c t j = 25 c t j = 125 c t j = 100 c t j = 25 c t j = 125 c t j = 100 c t j = 25 c t j = 125 c t j = 100 c t j = 25 c 100 1.0 10e-3 100e-3 1.0e-3 100e-6 10e-6 1.0e-6 100e-9 10e-3 25 c .com .com .com .com 4 .com u datasheet
MBR0540T1, mbr0540t3 http://onsemi.com 4 figure 5. current derating figure 6. forward power dissipation 20 60 0 t l , lead temperature ( c) 0.8 0.4 0.3 0.2 0.1 0 i o , average forward current (amps) 0.1 0 0.45 0.40 0.35 0.15 0.05 0 0.4 40 , average forward current (amps) i o 80 120 100 0.5 0.2 0.3 0.5 0.8 0.10 p fo , average power dissipation (watts) 140 0.6 square wave dc i pk /i o = i pk /i o = 5 i pk /i o = 10 i pk /i o = 20 i pk /i o = 20 i pk /i o = 10 i pk /i o = 5 i pk /i o = square wave dc 0.7 0.30 0.20 0.25 0.6 0.7 freq = 20 khz figure 7. capacitance figure 8. typical operating temperature derating* 30 0 v r , reverse voltage (volts) 100 10 v r , dc reverse voltage (volts) 25 40 0 118 114 112 110 c, capacitance (pf) t 15 5.0 10 20 25 35 40 30 35 5.0 10 20 15 116 120 126 , derated operating temperature ( c) j * reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. calculations of t j therefore must include forward and reverse power effects. the allowable operating t j may be calculated from the equation: t j = t jmax ? r(t)(pf + pr) where r(t) = thermal impedance under given conditions, pf = forward power dissipation, and pr = reverse power dissipation this graph displays the derated allowable t j due to reverse bias under dc conditions only and is calculated as t j = t jmax ? r(t)pr, where r(t) = rthja. for other power applications further calculations must be performed. r tja = 118 c/w 180 c/w 149 c/w 206 c/w 228 c/w t j = 25 c 122 124 .com .com .com .com 4 .com u datasheet
MBR0540T1, mbr0540t3 http://onsemi.com 5 figure 9. thermal response junction to lead figure 10. thermal response junction to ambient 100 0.1 0.00001 t, time (s) 1e+00 1e-01 1e-02 1,000 r 0.0001 0.001 0.01 1.0 10 1e-03 , transient thermal resistance (normalized) (t) t, time (s) 1e+00 1e-01 1e-02 r 1e-03 , transient thermal resistance (normalized) (t) rtjl(t) = rtjl*r(t) 50% 20% 10% 5.0% 2.0% 1.0% 100 0.1 0.00001 1,000 0.0001 0.001 0.01 1.0 10 rtjl(t) = rtjl*r(t) 50% 20% 10% 5.0% 2.0% 1.0% .com .com .com .com 4 .com u datasheet
MBR0540T1, mbr0540t3 http://onsemi.com 6 package dimensions sod?123 plastic case 425?04 issue c notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. cathode 2. anode aaa aaa aaa b d k a c e j 1 2 h dim min max min max millimeters inches a 0.055 0.071 1.40 1.80 b 0.100 0.112 2.55 2.85 c 0.037 0.053 0.95 1.35 d 0.020 0.028 0.50 0.70 e 0.004 --- 0.25 --- h 0.000 0.004 0.00 0.10 j --- 0.006 --- 0.15 k 0.140 0.152 3.55 3.85 1.22 0.048 0.91 0.036 2.36 0.093 4.19 0.165 mm inches scale 10:1 *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 MBR0540T1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative. .com .com .com 4 .com u datasheet
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